完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Yen-Junen_US
dc.contributor.authorChen, Hsiu-Chien_US
dc.contributor.authorYu, Ting-Yangen_US
dc.contributor.authorLai, Bo-Hungen_US
dc.contributor.authorShih, Yu-Chiaoen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:57:12Z-
dc.date.available2018-08-21T05:57:12Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2150-5934en_US
dc.identifier.urihttp://hdl.handle.net/11536/147173-
dc.description.abstractIn this work, hybrid bonding platform is successfully developed with solder bonding and photosensitive polyimide (PI) at 250 degrees C. Since solder may be affected by the curing process of polymer owing to its low melting point; an asymmetry hybrid bonding structure is proposed to overcome this issue. Metal and polymer can be well bonded simultaneously with wide integration flexibility through various ratios of polymer to metal. The mechanical strength of bonded structure is substantially improved with the better use of polymer filling in the extra areas between metal lines. The developed hybrid bonding structure shows excellent electrical characteristics and high wafer level uniformity. Furthermore, the bonded samples also show excellent reliability to endure temperature variation and humidity erosion after temperature cycling test and un-bias highly accelerated stress test. With the advantages of dielectric photosensitivity, excellent bonding qualities, high process flexibilities, strong mechanical strength, good electrical pertbrmance and high stability, the hybrid bonding structures have the outstanding potential to be used in future 3D heterogeneous applications.en_US
dc.language.isoen_USen_US
dc.titleAsymmetry Hybrid Bonding Using Cu/Sn Bonding with Polyimide for 3D Heterogeneous Integration Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 12TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)en_US
dc.citation.spage187en_US
dc.citation.epage190en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000427990200035en_US
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