Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

標題:	Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
作者:	Wang, C. H. Chang, S. P. Ku, P. H. Li, J. C. Lan, Y. P. Lin, C. C. Yang, H. C. Kuo, H. C. Lu, T. C. Wang, S. C. Chang, C. Y. 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
公開日期:	24-Oct-2011
摘要:	Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6% in comparison with 34% for conventional LED, supporting the improvement of hole transport in our design. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655903]
URI:	http://dx.doi.org/10.1063/1.3655903 http://hdl.handle.net/11536/14723
ISSN:	0003-6951
DOI:	10.1063/1.3655903
期刊:	APPLIED PHYSICS LETTERS
Volume:	99
Issue:	17
結束頁:
Appears in Collections:	Articles

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