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dc.contributor.authorYu, H. W.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorYamamoto, Y.en_US
dc.contributor.authorTillack, B.en_US
dc.contributor.authorWang, W. C.en_US
dc.contributor.authorKuo, C. I.en_US
dc.contributor.authorWong, Y. Y.en_US
dc.contributor.authorNguyen, H. Q.en_US
dc.date.accessioned2014-12-08T15:20:42Z-
dc.date.available2014-12-08T15:20:42Z-
dc.date.issued2011-10-24en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3656737en_US
dc.identifier.urihttp://hdl.handle.net/11536/14724-
dc.description.abstractThe growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 degrees C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 degrees C not only improves the surface morphology (roughness: 1.1 nm) but also reduces the anti-phase domains' (APDs) density in GaAs epitaxy (dislocation density: similar to 2 x 10(7) cm(-2)). Moreover, the unwanted interdiffusion between Ge and GaAs epitaxy is suppressed by using the graded-temperature arsenic prelayer due to the low energy of the Ge-As bond and the use of a low V/III ratio of 20. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656737]en_US
dc.language.isoen_USen_US
dc.titleEffect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3656737en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.citation.issue17en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000296518400025-
dc.citation.woscount4-
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