完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lien, An-Shao | en_US |
dc.contributor.author | Wang, L. Y. | en_US |
dc.contributor.author | Chu, C. S. | en_US |
dc.contributor.author | Lin, Juhn-Jong | en_US |
dc.date.accessioned | 2014-12-08T15:20:43Z | - |
dc.date.available | 2014-12-08T15:20:43Z | - |
dc.date.issued | 2011-10-17 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.84.155432 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/14733 | - |
dc.description.abstract | Temporal universal conductance fluctuations (TUCF's) are observed in RuO(2) nanowires at cryogenic temperatures. The fluctuations persist up to very high T similar to 10 K. Their root-mean-square magnitudes increase with decreasing T, reaching similar to 0.2e(2)/h at T less than or similar to 2 K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF's as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Temporal universal conductance fluctuations in RuO(2) nanowires due to mobile defects | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.84.155432 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 84 | en_US |
dc.citation.issue | 15 | en_US |
dc.citation.spage | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
顯示於類別: | 期刊論文 |