完整後設資料紀錄
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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorTseng, C. L.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChia, C. H.en_US
dc.contributor.authorHan, T. C.en_US
dc.contributor.authorShen, J. L.en_US
dc.date.accessioned2014-12-08T15:20:43Z-
dc.date.available2014-12-08T15:20:43Z-
dc.date.issued2011-10-13en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp207691cen_US
dc.identifier.urihttp://hdl.handle.net/11536/14737-
dc.description.abstractThis investigation systematically studies the lattice dynamics and crystalline properties in Zn(1-x)Mg(x)O using high-pressure Raman spectroscopy. The incorporation of Mg and the application of external pressure cause distinct phonon vibrational behaviors in ZnO. Accordingly, the 202.7, 332.7, and 511.5 cm(-1) phonons, which have been controversially assigned, can be conclusively identified. Detailed Raman spectra reveal that the metallic phase transition of ZnO is complete by around 13.2 GPa, which pressure is found to decrease as the Mg content increases. Upon pressure release, an unusual hysteresis effect (>10.0 GPa) in Zn(1-x)Mg(x)O is observed. The degree of crystal ionicity and anisotropy importantly affects the phase transition pressure of Zn(1-x)Mg(x)O. Under ambient conditions, ZnO becomes more ionic upon the incorporation of Mg and becomes more covalent under higher pressure. These results are caused by the interplay between the pressure dependence of the high-frequency dielectric constant and Born's transverse dynamical effective charge. The E(1)-A(1) splitting of the longitudinal and transverse optical phonons is analyzed, yielding insight into the pressure-dependent crystal anisotropy of Zn(1-x)Mg(x)O.en_US
dc.language.isoen_USen_US
dc.titleLattice Dynamics and Crystalline Properties of Wurtzite Zn(1-x)Mg(x)O Powders under High Pressureen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp207691cen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue40en_US
dc.citation.spage19962en_US
dc.citation.epage19970en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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