標題: | Ultra high-density silicon nanowires for extremely low reflection in visible regime |
作者: | Pei, Ting-Hang Thiyagu, Subramani Pei, Zingway 友訊交大聯合研發中心 D Link NCTU Joint Res Ctr |
公開日期: | 10-十月-2011 |
摘要: | We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching on a polystyrene nanosphere template. The density of SiNWs was as high as 10(10)/cm(2), and the bottom radii of SiNWs ranged between 30 and 60 nm. The reflection from the SiNW layer was approximately 0.1% over the spectral range of 300-800nm for SiNWs longer than 750 am. Effective medium theory was applied to explain this extremely low reflection, and it was confirmed that the incident light scatters randomly inside cone-like SiNWs, which lengthens the actual traveling path of light. (C) 2011 American Institute of Physics. [doi10.1063/1.3650266] |
URI: | http://dx.doi.org/10.1063/1.3650266 http://hdl.handle.net/11536/14739 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3650266 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 99 |
Issue: | 15 |
結束頁: | |
顯示於類別: | 期刊論文 |