標題: Ultra high-density silicon nanowires for extremely low reflection in visible regime
作者: Pei, Ting-Hang
Thiyagu, Subramani
Pei, Zingway
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
公開日期: 10-十月-2011
摘要: We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching on a polystyrene nanosphere template. The density of SiNWs was as high as 10(10)/cm(2), and the bottom radii of SiNWs ranged between 30 and 60 nm. The reflection from the SiNW layer was approximately 0.1% over the spectral range of 300-800nm for SiNWs longer than 750 am. Effective medium theory was applied to explain this extremely low reflection, and it was confirmed that the incident light scatters randomly inside cone-like SiNWs, which lengthens the actual traveling path of light. (C) 2011 American Institute of Physics. [doi10.1063/1.3650266]
URI: http://dx.doi.org/10.1063/1.3650266
http://hdl.handle.net/11536/14739
ISSN: 0003-6951
DOI: 10.1063/1.3650266
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 15
結束頁: 
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