Full metadata record
DC FieldValueLanguage
dc.contributor.authorWang, JPen_US
dc.contributor.authorTung, CJen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorKwei, CMen_US
dc.date.accessioned2014-12-08T15:02:52Z-
dc.date.available2014-12-08T15:02:52Z-
dc.date.issued1996-02-01en_US
dc.identifier.issn0168-583Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/0168-583X(95)01058-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/1473-
dc.description.abstractAn investigation of the surface effect on Au 4f X-ray photoelectron spectra was made for different emission angles, It was found that surface plasmon excitations made significant contributions to the spectra in single and plural energy-loss peaks and in the multiple loss background, Our approach involved Monte Carlo simulations of photoelectrons in the interior region of the solid and Poisson stochastic processes in the surface region. The partial-wave expansion method with the Hartree-Fock-Wigner-Seitz potential for the solid was used to calculate differential electron elastic scattering cross sections. An extended Drude dielectric function model was employed to compute electron differential inverse mean free paths for volume excitations. The inelastic mean free paths in the surface region became spatially-varying and were calculated. Differential probabilities for surface excitations were determined using the same model dielectric function. The computed X-ray photoelectron spectra including surface excitations agreed quite well with experimental data.en_US
dc.language.isoen_USen_US
dc.titleThe surface effect on Au 4f X-ray photoelectron spectraen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0168-583X(95)01058-0en_US
dc.identifier.journalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSen_US
dc.citation.volume108en_US
dc.citation.issue3en_US
dc.citation.spage331en_US
dc.citation.epage338en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TY12000016-
dc.citation.woscount10-
Appears in Collections:Articles


Files in This Item:

  1. A1996TY12000016.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.