Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

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DC Field	Value	Language
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Tsai, Wu-Wei	en_US
dc.contributor.author	Chen, Chia-Hsin	en_US
dc.contributor.author	Tsai, Chuang-Chuang	en_US
dc.date.accessioned	2014-12-08T15:20:44Z	-
dc.date.available	2014-12-08T15:20:44Z	-
dc.date.issued	2011-10-04	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/adma.201102530	en_US
dc.identifier.uri	http://hdl.handle.net/11536/14748	-
dc.language.iso	en_US	en_US
dc.title	Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/adma.201102530	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	37	en_US
dc.citation.spage	4237	en_US
dc.citation.epage	4242	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000296258900002	-
dc.citation.woscount	18	-
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