完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chuang, JC | en_US |
dc.contributor.author | Chen, MC | en_US |
dc.date.accessioned | 2019-04-02T05:59:33Z | - |
dc.date.available | 2019-04-02T05:59:33Z | - |
dc.date.issued | 1998-11-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.1838909 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/147647 | - |
dc.description.abstract | The effects of thermal N-2 annealing on the passivation capability of sputtered Ta and Ta-nitride [Ta(-N)] layers against Cu oxidation in a 200 Angstrom Ta(-N) covered Ta(-N)/Cu/SiO2/Si structures was investigated. The N-2 annealed Ta layers revealed degradation in passivation capability, presumably due to grain growth of the Ta passivation layer. In contrast, the nitrogen-doped Ta-nitride layers showed a contrary trend. For the Ta-nitride layer with 23.5 atom % of nitrogen, passivation capability was effectively improved by N-2 annealing at 300 degrees C. For the Ta-nitride layer with 30.5 atom % of nitrogen, N-2 annealing at higher temperatures (500-700 degrees C) was necessary to improve the passivation capability. The healing of sputtering damage of Ta-nitride passivation layers by the thermal N-2 annealing was responsible, presumably, for the improvement of passivation capability. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.1838909 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 145 | en_US |
dc.citation.spage | 4029 | en_US |
dc.citation.epage | 4035 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000076620600049 | en_US |
dc.citation.woscount | 14 | en_US |
顯示於類別: | 期刊論文 |