標題: Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
作者: Chuang, JC
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1998
摘要: Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7].
URI: http://dx.doi.org/10.1116/1.590336
http://hdl.handle.net/11536/148024
ISSN: 1071-1023
DOI: 10.1116/1.590336
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 16
Issue: 6
起始頁: 3021
結束頁: 3026
顯示於類別:期刊論文


文件中的檔案:

  1. d40a34069652cf9503dd1d9b3606c5eb.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。