標題: | Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation |
作者: | Chuang, JC Chen, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Nov-1998 |
摘要: | Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7]. |
URI: | http://dx.doi.org/10.1116/1.590336 http://hdl.handle.net/11536/148024 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.590336 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 16 |
Issue: | 6 |
起始頁: | 3021 |
結束頁: | 3026 |
Appears in Collections: | Articles |
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