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dc.contributor.authorChiang, Yen-Chihen_US
dc.contributor.authorLin, Bing-Chengen_US
dc.contributor.authorChen, Kuo-Juen_US
dc.contributor.authorChiu, Sheng-Huanen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-02T06:00:46Z-
dc.date.available2019-04-02T06:00:46Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn1110-662Xen_US
dc.identifier.urihttp://dx.doi.org/10.1155/2014/385257en_US
dc.identifier.urihttp://hdl.handle.net/11536/147733-
dc.description.abstractThe GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.en_US
dc.language.isoen_USen_US
dc.titleEfficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDsen_US
dc.typeArticleen_US
dc.identifier.doi10.1155/2014/385257en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF PHOTOENERGYen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000338879900001en_US
dc.citation.woscount4en_US
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