Compositional grading in GaAsSb grown on GaAs substrates

doi:10.1016/j.jcrysgro.2014.05.018

Title:	Compositional grading in GaAsSb grown on GaAs substrates
Authors:	Lin, Y. M. Chen, C. H. Wu, J. S. Lee, C. P. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Interfaces;Surfaces;X-ray diffraction;Molecular beam epitaxy;Semiconducting ternary compounds
Issue Date:	15-Sep-2014
Abstract:	The composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2014.05.018 http://hdl.handle.net/11536/147767
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2014.05.018
Journal:	JOURNAL OF CRYSTAL GROWTH
Volume:	402
Begin Page:	151
End Page:	154
Appears in Collections:	Articles