Compositional grading in GaAsSb grown on GaAs substrates

doi:10.1016/j.jcrysgro.2014.05.018

標題:	Compositional grading in GaAsSb grown on GaAs substrates
作者:	Lin, Y. M. Chen, C. H. Wu, J. S. Lee, C. P. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Interfaces;Surfaces;X-ray diffraction;Molecular beam epitaxy;Semiconducting ternary compounds
公開日期:	15-Sep-2014
摘要:	The composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2014.05.018 http://hdl.handle.net/11536/147767
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2014.05.018
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	402
起始頁:	151
結束頁:	154
Appears in Collections:	Articles