標題: Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors
作者: Tso, Chia-Tsung
Liu, Tung-Yu
Pan, Fu-Ming
Sheu, Jeng-Tzong
材料科學與工程學系
生醫工程研究所
Department of Materials Science and Engineering
Institute of Biomedical Engineering
公開日期: 1-四月-2017
摘要: The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and I-on showed significant doping concentration dependences for JL devices with doping concentrations of 1 x 10(19) and 5 x 10(19) cm(-3). However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 10(20) cm(-3) . (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.04CD14
http://hdl.handle.net/11536/147858
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.04CD14
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
顯示於類別:期刊論文