1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorTseng, Yuan-Hungen_US
dc.contributor.authorWu, Tsung-Hanen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.contributor.authorYen, Cheng-Tyngen_US
dc.contributor.authorHung, Chien-Chungen_US
dc.contributor.authorLee, Chwan-Yingen_US
dc.date.accessioned2019-04-02T05:59:58Z-
dc.date.available2019-04-02T05:59:58Z-
dc.date.issued2017-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.56.04CR02en_US
dc.identifier.urihttp://hdl.handle.net/11536/147859-
dc.description.abstractThe oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N-2/N2O flow ratios. The collision partner, N-2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner. (C) 2017 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleA comprehensive study on the oxidation of 4H-SiC in diluted N2O ambienten_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.56.04CR02en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume56en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000414623100081en_US
dc.citation.woscount0en_US
顯示於類別：期刊論文


相關內容
Loading...