Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide

Abstract

In this letter, the electrical properties of a HfAlON dielectric with UV-O-3 interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O-3 oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-k. dielectric applications.