標題: | Characteristics of the Fluorinated High-k Inter-Poly Dielectrics |
作者: | Hsieh, Chih-Ren Chen, Yung-Yu Lu, Kwung-Wen Lin, Gray Lou, Jen-Chung 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | Al(2)O(3);fluorine;HfO(2) |
公開日期: | 1-十二月-2010 |
摘要: | In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al(2)O(3)) and hafnium oxide (HfO(2)) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al(2)O(3) and HfO(2) IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO(2) possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al(2)O(3) IPD than the HfO(2) IPD. |
URI: | http://dx.doi.org/10.1109/LED.2010.2074181 http://hdl.handle.net/11536/31881 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2074181 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 12 |
起始頁: | 1446 |
結束頁: | 1448 |
顯示於類別: | 期刊論文 |