標題: Characteristics of the Fluorinated High-k Inter-Poly Dielectrics
作者: Hsieh, Chih-Ren
Chen, Yung-Yu
Lu, Kwung-Wen
Lin, Gray
Lou, Jen-Chung
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Al(2)O(3);fluorine;HfO(2)
公開日期: 1-十二月-2010
摘要: In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al(2)O(3)) and hafnium oxide (HfO(2)) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al(2)O(3) and HfO(2) IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO(2) possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al(2)O(3) IPD than the HfO(2) IPD.
URI: http://dx.doi.org/10.1109/LED.2010.2074181
http://hdl.handle.net/11536/31881
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2074181
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 12
起始頁: 1446
結束頁: 1448
顯示於類別:期刊論文


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