標題: | Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics |
作者: | Hsieh, Chih-Ren Chen, Yung-Yu Lu, Kwung-Wen Lin, Gray Lou, Jen-Chung 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | Flash memory;Fluorine;High-k dielectric;Inter-poly |
公開日期: | 1-六月-2011 |
摘要: | In this paper, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al(2)O(3)) and hafnium oxide (HfO(2)) inter-poly dielectric (IPD) are studied. Interface fluorine passivation has been demonstrated in terminating dangling bonds and oxygen vacancies, reducing interfacial re-oxidation and smoothing interface roughness, and diminishing trap densities. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al(2)O(3) and HfO(2) IPDs. Moreover, fluorine incorporation will also improve the dielectric quality of the interfacial layer. Although HfO(2) possesses higher dielectric constant to increase the gate coupling ratio, the results also demonstrate that fluorination of the Al(2)O(3) dielectric is more effective to promote the IPD characteristics than fluorination of the HfO(2) dielectric. For future stack-gate flash memory application, the fluorinated Al(2)O(3) IPD undoubtedly possesses higher potential to replace current ONO IPD than the fluorinated HfO(2) IPD due to superior insulating properties. (c) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mee.2010.12.027 http://hdl.handle.net/11536/8826 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2010.12.027 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 88 |
Issue: | 6 |
起始頁: | 945 |
結束頁: | 949 |
顯示於類別: | 期刊論文 |