標題: Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
作者: Chen, Shih-Chang
Chen, Yung-Yu
Chang, Yu-Tzu
Lou, Jen-Chung
Kin, Kon-Tsu
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-kappa;ozone;surface treatment;charge trapping;reliability
公開日期: 1-九月-2007
摘要: In this study, we improved the interfacial properties of high-kappa gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO2 gate stack interface in terms of its smoother interface, lower leakage current density, narrower hysteresis width, superior charge trapping effect, and reliability. From these experimental results, we believe that treatment with ozone is an efficient method for the preparation of high-quality interfaces between HfO2 and silicon surfaces.
URI: http://dx.doi.org/10.1016/j.mee.2007.04.127
http://hdl.handle.net/11536/4096
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.04.127
期刊: MICROELECTRONIC ENGINEERING
Volume: 84
Issue: 9-10
起始頁: 1898
結束頁: 1901
顯示於類別:會議論文


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