標題: | Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks |
作者: | Chen, Shih-Chang Chen, Yung-Yu Chang, Yu-Tzu Lou, Jen-Chung Kin, Kon-Tsu Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | high-kappa;ozone;surface treatment;charge trapping;reliability |
公開日期: | 1-九月-2007 |
摘要: | In this study, we improved the interfacial properties of high-kappa gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO2 gate stack interface in terms of its smoother interface, lower leakage current density, narrower hysteresis width, superior charge trapping effect, and reliability. From these experimental results, we believe that treatment with ozone is an efficient method for the preparation of high-quality interfaces between HfO2 and silicon surfaces. |
URI: | http://dx.doi.org/10.1016/j.mee.2007.04.127 http://hdl.handle.net/11536/4096 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2007.04.127 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 84 |
Issue: | 9-10 |
起始頁: | 1898 |
結束頁: | 1901 |
顯示於類別: | 會議論文 |