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dc.contributor.authorWu, Cheng-Hsienen_US
dc.contributor.authorLin, Shih-Kaien_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorLin, Wen-Yanen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorXu, You-Linen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorLin, Yu-Shuoen_US
dc.contributor.authorChen, Wen-Chungen_US
dc.contributor.authorWang, Ming-Huien_US
dc.contributor.authorZhang, Sheng-Dongen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2019-04-02T05:59:36Z-
dc.date.available2019-04-02T05:59:36Z-
dc.date.issued2018-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2018.2849507en_US
dc.identifier.urihttp://hdl.handle.net/11536/147920-
dc.description.abstractIn this letter, we determine the importance of the electrical field distribution and strength during the switching process by demonstrating different trends in the degree of reset and the reset pulse time. In general, a longer reset pulse time results in a higher reset energy; a higher reset energy leads to a higher degree of reset, which we obtainedby applying different width square waves. But quite notably, the opposite result was obtained using triangle waves, where a higher degree of reset occurred with a shorter rising time and lower reset energy. We believe that this is due to the electric field effect: if the voltage rises faster than the filament oxidation, the device can produce a larger effective electric field and a higher resistance in the reset process. To further investigate the mechanism, the procedure of the reset process was analyzed in detail, and COMSOL simulation is also carried out for confirmation.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectelectrical fielden_US
dc.subjectsimulationen_US
dc.subjectfilament oxidationen_US
dc.titleAnalyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAMen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2018.2849507en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume39en_US
dc.citation.spage1163en_US
dc.citation.epage1166en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000440006100012en_US
dc.citation.woscount1en_US
Appears in Collections:Articles