Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Kuan-Chao | en_US |
dc.contributor.author | Jian, Cing-Yu | en_US |
dc.contributor.author | Chen, Yi-Jia | en_US |
dc.contributor.author | Lee, Si-Chen | en_US |
dc.contributor.author | Chang, Shu-Wei | en_US |
dc.contributor.author | Lin, Shih-Yen | en_US |
dc.date.accessioned | 2019-04-02T05:59:33Z | - |
dc.date.available | 2019-04-02T05:59:33Z | - |
dc.date.issued | 2018-07-25 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsami.8b06327 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/147941 | - |
dc.description.abstract | We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys MoxW1-xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution of both cations Mo and W in the grown samples. Surprisingly, we find that the drain current of transistors could be enhanced by 2 orders of magnitude as the composition of Mo increases, whereas the gate-controlled current modulation turns bipolar and ultimately vanishes. These features might originate from the formation of in-gap defect states, with modest activation energy for transport and moderate hopping probability for current conduction, or a reduced electronic band gap of the conducting channel because of strain. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 2D material alloys | en_US |
dc.subject | heterostructures | en_US |
dc.subject | activation energy | en_US |
dc.subject | hopping probability | en_US |
dc.subject | strained 2D materials | en_US |
dc.subject | transistors | en_US |
dc.subject | top gates | en_US |
dc.title | Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1-xS2 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsami.8b06327 | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.spage | 24733 | en_US |
dc.citation.epage | 24738 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000440511900046 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |