完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Tseng, Yi-Ting | en_US |
dc.contributor.author | Chen, I-Chieh | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Huang, J. C. | en_US |
dc.contributor.author | Shih, Chih-Cheng | en_US |
dc.contributor.author | Zheng, Hao-Xuan | en_US |
dc.contributor.author | Chen, Wen-Chung | en_US |
dc.contributor.author | Wang, Ming-Hui | en_US |
dc.contributor.author | Huang, Wei-Chen | en_US |
dc.contributor.author | Chen, Min-Chen | en_US |
dc.contributor.author | Ma, Xiao-Hua | en_US |
dc.contributor.author | Hao, Yue | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.date.accessioned | 2019-04-02T05:59:30Z | - |
dc.date.available | 2019-04-02T05:59:30Z | - |
dc.date.issued | 2018-07-30 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.5023527 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/147959 | - |
dc.description.abstract | In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order, The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode, Cu ions drifted into the insulator and generated a conductive path when applying voltage bias, The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics. Published by AIP Publishing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.5023527 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 113 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000440813000034 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 期刊論文 |