標題: The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
作者: Chandrasekaran, Sridhar
Simanjuntak, Firman Mangasa
Aluguri, Rakesh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: Conductive filament;Electro-chemical metallization;Valence change memory;Switching device;Zirconium dioxide;Titanium tungsten alloy
公開日期: 30-Aug-2018
摘要: The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.
URI: http://dx.doi.org/10.1016/j.tsf.2018.03.065
http://hdl.handle.net/11536/147982
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2018.03.065
期刊: THIN SOLID FILMS
Volume: 660
起始頁: 777
結束頁: 781
Appears in Collections:Articles