標題: Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition
作者: Ruan, Dun-Bao
Liu, Po-Tsun
Chiu, Yu-Chuan
Kan, Kai-Zhi
Yu, Min-Chin
Chien, Ta-Chun
Chen, Yi-Heng
Kuo, Po-Yi
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Indium-Zinc-Tin-Oxide;Thin-film transistors;High-dielectric constant;Low voltage operation;Physical vapor deposition
公開日期: 30-Aug-2018
摘要: Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor deposition (PVD) process for better composition control. Compared with the traditional SiO2 gate insulator, a high-k gate dielectric can reduce the operation voltage of TFT device significantly. The TFT device with ZrO2 gate insulator exhibits a small subthreshold swing of 0.126 V/decade, high field-effect mobility of similar to 40.7 cm(2)/Vs, low threshold voltage of -0.05 V, and large On/Off current ratio of similar to 1.01 x 10(7). The mechanisms for electrical improvements are also investigated. These results demonstrate the potential application of PVD-deposited ZrO2 thin film as a promising gate dielectric in oxide-based thin-film transistors.
URI: http://dx.doi.org/10.1016/j.tsf.2018.02.036
http://hdl.handle.net/11536/147984
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2018.02.036
期刊: THIN SOLID FILMS
Volume: 660
起始頁: 885
結束頁: 890
Appears in Collections:Articles