完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, Chun-Anen_US
dc.contributor.authorDai, Guang-Jyunen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-04-02T05:58:38Z-
dc.date.available2019-04-02T05:58:38Z-
dc.date.issued2018-09-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2018.2859227en_US
dc.identifier.urihttp://hdl.handle.net/11536/148040-
dc.description.abstractThe switching properties of Te and TeTiW top electrodes (TEs) on TiW/SitsifTiN resistive switching memory devices are explored in this paper. The TeTiW TE device exhibits more favorable bipolar resistive switching behavior because of the decrease in binding energy after its use. This finding is confirmed through X-ray photoelectron spectroscopy analyses. The filament of the TeTiW TE device is metal like after forming, and the reset process corresponds with the thermal-dissolution mechanism. A physical model based on a Te filament is constructed to explain such phenomena. The TeTiW TE device provides the excellent endurance of more than 10(4) cycles, with an ON/OFF ratio of 500. The improvement can be attributed to the filament's robustness during the forming and set processes, which prevent its diffusion even at high temperature. The device also features long retention for up to 10(4) sat 225 degrees C without stress, and 10(4) s at 85 degrees C with stress of -0.3 V. Therefore, it has high potential for high-density nonvolatile memory applications.en_US
dc.language.isoen_USen_US
dc.subjectBinding energyen_US
dc.subjectbipolar resistive switching (BRS)en_US
dc.subjectconductive bridge random access memory (CBRAM)en_US
dc.subjectfilament diffusionen_US
dc.subjectretentionen_US
dc.titleResistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2018.2859227en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume65en_US
dc.citation.spage3775en_US
dc.citation.epage3779en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000442357000026en_US
dc.citation.woscount1en_US
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