完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chu, Yi-Cheng | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2019-04-02T05:58:38Z | - |
dc.date.available | 2019-04-02T05:58:38Z | - |
dc.date.issued | 2017-10-03 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/2.0061710jss | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148053 | - |
dc.description.abstract | Nickel has a high twinning energy of 110 MJ/m(2), and it is thus difficult to fabricate nanotwinned Ni (nt-Ni) films. In this study, we adopt <111>-oriented nanotwinned Cu films as a substrate for the growth of nt-Ni films, and successfully electroplate <111>-oriented Ni films with densely-packed nanotwins. The average twin spacing is only 22 nm, while the grain size is over 1 mu m. The nt-Ni film can be grown to a thickness of approximately 2.6 mu m; beyond that, the Ni film becomes nanocrystalline. This approach provides a promising method to fabricate <111>-oriented nt-Ni films with controlled microstructures. (C) 2017 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Communication-Growth of <111> Nanotwinned Nickel Films on <111> Nanotwinned Cu Substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.0061710jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 6 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000442731800001 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |