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dc.contributor.authorChu, Yi-Chengen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T05:58:38Z-
dc.date.available2019-04-02T05:58:38Z-
dc.date.issued2017-10-03en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0061710jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/148053-
dc.description.abstractNickel has a high twinning energy of 110 MJ/m(2), and it is thus difficult to fabricate nanotwinned Ni (nt-Ni) films. In this study, we adopt <111>-oriented nanotwinned Cu films as a substrate for the growth of nt-Ni films, and successfully electroplate <111>-oriented Ni films with densely-packed nanotwins. The average twin spacing is only 22 nm, while the grain size is over 1 mu m. The nt-Ni film can be grown to a thickness of approximately 2.6 mu m; beyond that, the Ni film becomes nanocrystalline. This approach provides a promising method to fabricate <111>-oriented nt-Ni films with controlled microstructures. (C) 2017 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleCommunication-Growth of <111> Nanotwinned Nickel Films on <111> Nanotwinned Cu Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0061710jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume6en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000442731800001en_US
dc.citation.woscount0en_US
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