Experimental Analysis of Quasi-Ballistic Transport in Advanced Si nFinFETs Using New Extraction Method

Abstract

For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si nFinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si nFinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (similar to 60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.