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dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorChang, Guan-Changen_US
dc.contributor.authorChen, Shih-Chengen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorYeh (Huang), Fon-Shanen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:20:50Z-
dc.date.available2014-12-08T15:20:50Z-
dc.date.issued2011en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/14814-
dc.identifier.urihttp://dx.doi.org/10.1149/2.007112eslen_US
dc.description.abstractThis paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInfluence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.007112eslen_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue12en_US
dc.citation.spageH475en_US
dc.citation.epageH477en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000296661100013-
dc.citation.woscount7-
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