標題: | Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/alpha-IGZO/ITO structure |
作者: | Lo, Chun-Chieh Hsieh, Tsung-Eong 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | forming-free;alpha-IGZO;transparent resistive random access memory (TRRAM);resistance switching |
公開日期: | 28-九月-2016 |
摘要: | Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V-SET = 0.61 V; V-RESET = -0.76 V; R-HRS/R-LRS (i.e. the R-ratio) > 10(3)) was observed in the device subject to a post-annealing at 300 degrees C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 degrees C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer. |
URI: | http://dx.doi.org/10.1088/0022-3727/49/38/385102 http://hdl.handle.net/11536/134223 |
ISSN: | 0022-3727 |
DOI: | 10.1088/0022-3727/49/38/385102 |
期刊: | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
Volume: | 49 |
Issue: | 38 |
顯示於類別: | 期刊論文 |