Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics

Abstract

A transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.