標題: Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics
作者: Liu, Kou-Chen
Tzeng, Wen-Hsien
Chang, Kow-Ming
Chan, Yi-Chun
Kuo, Chun-Chih
Cheng, Chun-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: A transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.
URI: http://hdl.handle.net/11536/134876
ISBN: 978-1-4244-3543-2
期刊: INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
起始頁: 898
結束頁: +
Appears in Collections:Conferences Paper