標題: Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/alpha-IGZO/ITO structure
作者: Lo, Chun-Chieh
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: forming-free;alpha-IGZO;transparent resistive random access memory (TRRAM);resistance switching
公開日期: 28-Sep-2016
摘要: Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V-SET = 0.61 V; V-RESET = -0.76 V; R-HRS/R-LRS (i.e. the R-ratio) > 10(3)) was observed in the device subject to a post-annealing at 300 degrees C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 degrees C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.
URI: http://dx.doi.org/10.1088/0022-3727/49/38/385102
http://hdl.handle.net/11536/134223
ISSN: 0022-3727
DOI: 10.1088/0022-3727/49/38/385102
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 49
Issue: 38
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