完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, Chung-Chun | en_US |
dc.contributor.author | Chi, Wei-Chun | en_US |
dc.contributor.author | Tsai, Yi-He | en_US |
dc.contributor.author | Tsai, Ming-Li | en_US |
dc.contributor.author | Wang, Shin-Yuan | en_US |
dc.contributor.author | Chou, Chen-Han | en_US |
dc.contributor.author | Zhang, Jun Lin | en_US |
dc.contributor.author | Luo, Guang-Li | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.date.accessioned | 2019-04-02T06:00:50Z | - |
dc.date.available | 2019-04-02T06:00:50Z | - |
dc.date.issued | 2018-09-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.5051519 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148160 | - |
dc.description.abstract | In this paper, a method that entails using microwave thermal oxidation to form a high-quality gate dielectric on Ge through surface passivation at considerably low temperatures (<400 degrees C) is presented. Formation of the GeOx layer was confirmed by x-ray photoelectron spectroscopy. To reduce the bulk trap density and interface trap density (D-it), microwave thermal oxidation was employed for post-deposition microwave thermal oxidation after the deposition of Al2O3 through atomic layer deposition. Tiny frequency dispersion in capacitance measurement and a low D-it value of 5.9 x 10(11) cm(-2) eV(-1) near the midgap confirmed a desirable passivation effect, which was favorable in mitigating the formation of dangling bonds on the Ge surface. A small hysteresis in capacitance was also observed, suggesting that the bulk dielectric was of high quality. On the basis of these characteristics, microwave-activated GeOx is a promising passivation layer material for aggressively scaled Ge-related metal oxide semiconductor devices. Published by the AVS. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.5051519 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 36 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000444809600005 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 期刊論文 |