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dc.contributor.authorLiu, Chi-Weien_US
dc.contributor.authorLee, Hui-Hsuanen_US
dc.contributor.authorLiao, Pei-Chunen_US
dc.contributor.authorChen, Yi-Lunen_US
dc.contributor.authorChung, Ming-Jieen_US
dc.contributor.authorChen, Po-Hungen_US
dc.date.accessioned2019-04-02T06:00:22Z-
dc.date.available2019-04-02T06:00:22Z-
dc.date.issued2018-10-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2018.2844358en_US
dc.identifier.urihttp://hdl.handle.net/11536/148234-
dc.description.abstractIn this paper, we present a single-inductor triple-input-triple-output (SITITO) buck-boost converter in a 0.18-mu m CMOS process for dual-source energy harvesting. The converter operates in the single-source mode, dual-source mode (DSM), and backup mode automatically by detecting the input and output conditions. Converter operation in the proposed DSM enables extraction of power from both a photovoltaic cell and a thermoelectric generator in one switching cycle for efficient power extraction. The cycle-by-cycle source-tracking approach selects the appropriate input source according to the maximum power point of the energy transducers. The adaptive on-time circuit with the proposed adaptive peak-inductor-current (APIC) control adjusts the on-time of power transistors to obtain high conversion efficiency under different input voltages. The experimental results demonstrate that the proposed SITITO converter has a peak efficiency of 84.4%. When compared with the conventional constant peak-inductor-current control, an efficiency improvement of 11% is obtained via the proposed APIC control.en_US
dc.language.isoen_USen_US
dc.subjectAdaptive peak-inductor-current (APIC) controlen_US
dc.subjectbuck-boost converteren_US
dc.subjectcycle-by-cycle source tracking (CCST)en_US
dc.subjectdc-dc converteren_US
dc.subjectdual sourceen_US
dc.subjectenergy harvestingen_US
dc.titleDual-Source Energy-Harvesting Interface With Cycle-by-Cycle Source Tracking and Adaptive Peak-Inductor-Current Controlen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2018.2844358en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume53en_US
dc.citation.spage2741en_US
dc.citation.epage2750en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000446116400002en_US
dc.citation.woscount0en_US
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