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dc.contributor.authorTsai, Ming-Hungen_US
dc.contributor.authorWang, Chun-Wenen_US
dc.contributor.authorTsai, Che-Weien_US
dc.contributor.authorShen, Wan-Juien_US
dc.contributor.authorYeh, Jien-Weien_US
dc.contributor.authorGan, Jon-Yiewen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2014-12-08T15:20:50Z-
dc.date.available2014-12-08T15:20:50Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/14828-
dc.identifier.urihttp://dx.doi.org/10.1149/2.056111jesen_US
dc.description.abstractDevelopment of better diffusion barriers for Cu metallization is one of the key issues for the microelectronics industry. Although metallic diffusion barriers offer many advantages, their application is hindered due to their inferior thermal stability relative to ceramic barriers. Here we report on a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barriers. The outstanding performance of NbSiTaTiZr is due to its better structural and chemical stability at high temperatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.056111jes] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThermal Stability and Performance of NbSiTaTiZr High-Entropy Alloy Barrier for Copper Metallizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.056111jesen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue11en_US
dc.citation.spageH1161en_US
dc.citation.epageH1165en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000295626000063-
dc.citation.woscount19-
Appears in Collections:Articles


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