Full metadata record
DC FieldValueLanguage
dc.contributor.authorChu, Yi-Chengen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T05:59:47Z-
dc.date.available2019-04-02T05:59:47Z-
dc.date.issued2018-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2018.10.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/148331-
dc.description.abstractGrain growth in Cu-to-Cu bonding was investigated at 250 degrees C and 300 degrees C. With highly [111]-oriented nanotwinned Cu (nt-Cu) films, bonding can be achieved with the aid of high diffusivity on Cu (111) surfaces at 250 degrees C for 1 h. Yet, recrystallization did not occur at this annealing condition. However, recrystallization and anisotropic grain growth took place at 250 degrees C for 2 h and 300 degrees C for 0.5 h. The bonding interface was eliminated and extremely large Cu grains grew. The temperature of 250 degrees C is the lowest temperature ever reported for elimination of the bonding interface. For comparison, the Cu joints fabricated by ordinary Cu films did not have obvious grain growth at 300 degrees C for 0.5 h.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic grain growth to eliminate bonding interfaces in direct copper-tocopper joints using < 111> -oriented nanotwinned copper filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2018.10.010en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume667en_US
dc.citation.spage55en_US
dc.citation.epage58en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000447652200009en_US
dc.citation.woscount0en_US
Appears in Collections:Articles