標題: High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
作者: Wang, Huan-Chung
Lumbantoruan, Franky Juanda
Hsieh, Ting-En
Wu, Chia-Hsun
Lin, Yueh-Chin
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: InAlGaN/GaN;MIS-HEMT;LPCVD;SiNx;figure of merit
公開日期: 1-一月-2018
摘要: We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 degrees C. Excellent LPCVD-SiNx/InAlGaN interface and SiNx film quality were obtained, resulting in very high output current density, a very small threshold voltage hysteresis and steep subthreshold slope. The LPCVD-SiNx/InAlGaN/GaN MIS-HEMT device exhibited high on/off current ratio, large gate voltage swing, high breakdown voltage, and very low dynamic on-resistance (R-ON) degradation, meaning effective current collapse suppression compared to the plasma enhanced chemical vapor deposition -SiN x /InAlGaN/GaN MIS-HEMTs. The corresponding specific on-resistance (RoN, sp ) for LPCVD-SiN x device was as low as 0.98 m Omega.cm(2), yielding a high figure of merit of 737 MW/cm(2) . These results demonstrate a great potential of the LPCVD-SiNx /InAlGaN/GaN MIS-HEMTs for high-power switching applications.
URI: http://dx.doi.org/10.1109/JEDS.2018.2869776
http://hdl.handle.net/11536/148341
ISSN: 2168-6734
DOI: 10.1109/JEDS.2018.2869776
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 6
起始頁: 1136
結束頁: 1141
顯示於類別:期刊論文