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dc.contributor.authorHuang, Ting-Kaien_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorTing, Yi-Hsinen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2019-04-02T05:59:26Z-
dc.date.available2019-04-02T05:59:26Z-
dc.date.issued2018-11-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.201800256en_US
dc.identifier.urihttp://hdl.handle.net/11536/148421-
dc.description.abstractResistive random-access memory (ReRAM) is one of the most promising types of nonvolatile memory because it has several important advantages, for example, a simple metal-insulator-metal structure, fast operating speed, high endurance, high retention, and low energy consumption. However, the reliability of ReRAM nanodevices is not persistent, and the complete switching mechanism is not fully understood. In this study, a unique 1D Ni/NiO/HfO2 core/multishell ReRAM nanodevice is designed and fabricated. The different properties, including the electrical characteristics, surface morphology, and elemental distribution, are systematically investigated. The Ni/NiO/HfO2 heterostructure nanowire ReRAM device exhibits excellent electrical characteristics and resistive switching properties. It is remarkable that the endurance could be maintained up to 200 cycles, which is extremely good for a 1D ReRAM device. Additionally, a focused-ion beam technique is used to prepare samples for subsequent transmission electron microscopic (TEM) observation. From the TEM analysis, the position of the conducting filaments is verified and the elemental composition of the conducting filaments is confirmed. The migration of hafnium ions forms the conducting filaments between the HfO2 layer and Ni core, resulting in the switching characteristic. The study enriches the understanding of the mechanism and provides a design to enhance the resistive switching properties of ReRAM nanodevices.en_US
dc.language.isoen_USen_US
dc.subject1D ReRAM devicesen_US
dc.subjectconducting filamentsen_US
dc.subjectcore/multishell nanowire heterostructuresen_US
dc.subjectreliabilityen_US
dc.subjectresistive random access memoryen_US
dc.titleNi/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.201800256en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.volume4en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000449545900004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles