標題: | In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories |
作者: | Huang, Yu-Ting Yu, Shih-Ying Hsin, Cheng-Lun Huang, Chun-Wei Kang, Chen-Fang Chu, Fu-Hsuan Chen, Jui-Yuan Hu, Jung-Chih Chen, Lien-Tai He, Jr-Hau Wu, Wen-Wei 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 16-四月-2013 |
摘要: | Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration. |
URI: | http://dx.doi.org/10.1021/ac303528m http://hdl.handle.net/11536/21668 |
ISSN: | 0003-2700 |
DOI: | 10.1021/ac303528m |
期刊: | ANALYTICAL CHEMISTRY |
Volume: | 85 |
Issue: | 8 |
起始頁: | 3955 |
結束頁: | 3960 |
顯示於類別: | 期刊論文 |