標題: Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
作者: Anandan, Deepak
Kakkerla, Ramesh Kumar
Yu, Hung Wei
Ko, Hua Lun
Nagarajan, Venkatesan
Singh, Sankalp Kumar
Lee, Ching Ting
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: Nanomaterials;MOCVD;Semiconducting III-V materials;Antimonides;Solubility;Infrared devices
公開日期: 15-一月-2019
摘要: In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameters lead to In-rich growth regime such that direct impingement of growth precursors on top of grown InAs NW (self-assembled) stems result in axial InSb HSs nucleation on InAs stems. The observed indium (In) droplet on InSb HS NW tip shows that InSb HS growth followed a self-catalyzed growth mechanism. InSb HS axial growth rate and morphology are controlled by growth temperature and growth time. A small change in the growth parameters significantly affects In particle accumulation, particle size and its chemical composition, and thus affects the InSb nucleation on the stem. Especially, it is found that (i) growth time of less 10 min yields vertical InSb HS NW on the top of the InAs stem, (ii) as the growth time increases above 10 min, the growth turned to be InSb wrapped InAs/InSb core-shell HS due to coaxial lateral growth. High resolution transmission electron microscopy (HRTEM) study reveals that all the InSb HSs exhibit pure zinc-blende (ZB) crystal structure. The results presented here provide significant guidelines for external catalyst-free InAs/InSb HS NW growth using MOCVD on silicon (Si) substrate for various optoelectronics and electronics applications.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2018.09.046
http://hdl.handle.net/11536/148434
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.09.046
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 506
起始頁: 45
結束頁: 54
顯示於類別:期刊論文