標題: Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
作者: Anandan, Deepak
Nagarajan, Venkatesan
Kakkerla, Ramesh Kumar
Yu, Hung Wei
Ko, Hua Lun
Singh, Sankalp Kumar
Lee, Ching Ting
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: Nanomaterials;Semiconducting III-V materials;MOCVD;Infrared devices;Crystal structure;Antimonides
公開日期: 15-九月-2019
摘要: In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2019.06.016
http://hdl.handle.net/11536/152173
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.06.016
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 522
起始頁: 30
結束頁: 36
顯示於類別:期刊論文