標題: | Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio |
作者: | Anandan, Deepak Nagarajan, Venkatesan Kakkerla, Ramesh Kumar Yu, Hung Wei Ko, Hua Lun Singh, Sankalp Kumar Lee, Ching Ting Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 國際半導體學院 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
關鍵字: | Nanomaterials;Semiconducting III-V materials;MOCVD;Infrared devices;Crystal structure;Antimonides |
公開日期: | 15-九月-2019 |
摘要: | In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2019.06.016 http://hdl.handle.net/11536/152173 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2019.06.016 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 522 |
起始頁: | 30 |
結束頁: | 36 |
顯示於類別: | 期刊論文 |