Title: Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
Authors: Kakkerla, Ramesh Kumar
Hsiao, Chih-Jen
Anandan, Deepak
Singh, Sankalp Kumar
Chang, Sheng-Po
Pande, Krishna P.
Chang, Edward Yi
材料科學與工程學系
國際半導體學院
Department of Materials Science and Engineering
International College of Semiconductor Technology
Keywords: Au-free nanowire growth;InAs/GaSb heterostructure;metal organic chemical vapor deposition;tunnelling field;effect transistor;wurtzite;zinc-blende
Issue Date: 1-Nov-2018
Abstract: We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs) on Si(111) substrate by metal organic chemical vapor deposition technique. The effect of growth temperature on morphology and growth rate for InAs and InAs/GaSb heterostructure NWs were investigated. A combination of high material flow rates and optimum temperature (600 degrees C) has given better crystal quality of InAs nanowires. The morphology and shell thickness of NWs as observed by scanning electron microscope and transmission electron microscope (TEM) measurements can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core at certain growth temperatures. Crystal structure of InAs and InAs/GaSb heterostructure NWs was analyzed by high-resolution TEM and fast Fourier transform analysis. Using good crystalline InAs core grown at optimized growth temperature (600 degrees C), GaSb shell has been grown without any misfit dislocations at the core-shell interface. Basic electrical properties have been measured by forming ohmic contacts. I-V characteristics exhibit linear response indicating good ohmic behavior. These results show good control over InAs NWs growth, the GaSb shell thickness, and its crystal quality, which are essential for future nanoelectronic devices such as tunneling FET.
URI: http://dx.doi.org/10.1109/TNANO.2018.2874271
http://hdl.handle.net/11536/148453
ISSN: 1536-125X
DOI: 10.1109/TNANO.2018.2874271
Journal: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 17
Begin Page: 1151
End Page: 1158
Appears in Collections:Articles