Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

標題:	Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall
作者:	Pai, Yung-Min Lin, Chih-Hao Lee, Chun-Fu Lin, Chun-Peng Chen, Cheng-Huan Kuo, Hao-Chung Ye, Zhi-Ting 光電工程學系光電工程研究所 Department of Photonics Institute of EO Enginerring
關鍵字:	light emitting diode;deep-ultraviolet light-emitting diode;reflector inclined plane;metal diameter of cavity bottom
公開日期:	1-十一月-2018
摘要:	To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.
URI:	http://dx.doi.org/10.3390/cryst8110420 http://hdl.handle.net/11536/148500
ISSN:	2073-4352
DOI:	10.3390/cryst8110420
期刊:	CRYSTALS
Volume:	8
顯示於類別：	期刊論文

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