標題: | Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies |
作者: | Chuang, HF Lee, CP Tsai, CM Liu, DC Tsang, JS Fan, JC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-1998 |
摘要: | We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100 degrees C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. (C) 1998 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.366692 http://hdl.handle.net/11536/148534 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.366692 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 83 |
起始頁: | 366 |
結束頁: | 371 |
顯示於類別: | 期刊論文 |