標題: Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
作者: Chuang, HF
Lee, CP
Tsai, CM
Liu, DC
Tsang, JS
Fan, JC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-1998
摘要: We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100 degrees C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. (C) 1998 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.366692
http://hdl.handle.net/11536/148534
ISSN: 0021-8979
DOI: 10.1063/1.366692
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 83
起始頁: 366
結束頁: 371
Appears in Collections:Articles