標題: The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors
作者: Wu, Chien-Hung
Chang, Kow-Ming
Chen, Yi-Ming
Zhang, Yu-Xin
Cheng, Chia-Yao
電子工程學系及電子研究所
國際半導體學院
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: IGZO TFTs;Microwave Annealing;Stretched-Exponential Model;Positive Bias Stress
公開日期: 1-四月-2019
摘要: Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. The thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher field-effect mobility (>10 cm(2)/V . S), larger I-on/I-off ratio (>10(6)), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.
URI: http://dx.doi.org/10.1166/jnn.2019.15996
http://hdl.handle.net/11536/148539
ISSN: 1533-4880
DOI: 10.1166/jnn.2019.15996
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 19
起始頁: 2189
結束頁: 2192
顯示於類別:期刊論文