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dc.contributor.authorLiu, Chienen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorLin, Ming-Hueien_US
dc.contributor.authorShih, Yi-Jiaen_US
dc.contributor.authorHung, Yu-Wenen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorChen, Hsuan-Hanen_US
dc.contributor.authorChen, Wan-Hsinen_US
dc.contributor.authorHsu, Chih-Chiehen_US
dc.contributor.authorShih, Bing-Yangen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2019-04-02T05:58:08Z-
dc.date.available2019-04-02T05:58:08Z-
dc.date.issued2018-12-05en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0061812jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/148571-
dc.description.abstractIn this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of > 1 mu A/mu m, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of > 10(7) than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio. (C) 2018 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleImproved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channelsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0061812jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume7en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000452390600001en_US
dc.citation.woscount0en_US
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