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dc.contributor.authorLi, Hengen_US
dc.contributor.authorChang, Chia-Juien_US
dc.contributor.authorKuo, Shiou-Yien_US
dc.contributor.authorWu, Hao-Chengen_US
dc.contributor.authorHuang, Huamaoen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2019-04-02T05:58:09Z-
dc.date.available2019-04-02T05:58:09Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2018.2883158en_US
dc.identifier.urihttp://hdl.handle.net/11536/148578-
dc.description.abstractNear-ultraviolet (NUV) light-emitting diodes (LEDs) have been used in several potential applications such as UV curing and biochemical sensors. However, the internal quantum efficiency (IQE) of NUV-LEDs is still a crucial issue. To improve the IQE, in this paper, an asymmetric triangular multiple quantum well (MQW) structure was used, which exhibited a higher emission efficiency and lower efficiency droop with nitrogen face-oriented inclination. This is in contrast to the trend observed in blue LEDs. Furthermore, we demonstrated that holes are more confined in MQWs with nitrogen face-oriented inclination than in MQWs with gallium face-oriented inclination. Moreover, simulations revealed that the IQE improved by approximately 32% compared with that of symmetric square MQWNUV-LEDs; this trend was also confirmed through experimental results. The external quantum efficiency of thin-film flip-chip LEDs with nitrogen face-oriented inclination MQWs was 52%.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectultravioleten_US
dc.subjectlight-emitting diodeen_US
dc.titleImproved Performance of Near UV GaN-Based Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2018.2883158en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume55en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000452607000001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles