Full metadata record
DC FieldValueLanguage
dc.contributor.authorChu, Yu-Hsunen_US
dc.contributor.authorWang, Li-Hongen_US
dc.contributor.authorLee, Shin-Yeen_US
dc.contributor.authorChen, Hou-Juen_US
dc.contributor.authorYang, Po-Yaen_US
dc.contributor.authorButler, Christopher J.en_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorYeh, Hanen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLin, Minn-Tsongen_US
dc.date.accessioned2019-04-02T05:58:26Z-
dc.date.available2019-04-02T05:58:26Z-
dc.date.issued2018-12-10en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5053144en_US
dc.identifier.urihttp://hdl.handle.net/11536/148596-
dc.description.abstractLateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleAtomic scale depletion region at one dimensional MoSe2-WSe2 heterointerfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5053144en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume113en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000453223900004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles